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si3863dv vishay siliconix new product document number: 70866 s-60514erev. a, 5-apr-99 www.vishay.com faxback 408-970-5600 2-1 load switch with level-shift v ds2 (v) r ds(on) ( ) i d (a) 25 12 0.105 @ v in = 4.5 v 2.5 2.5 to 12 0.125 @ v in = 3.0 v 2.1 0.165 @ v in = 2.5 v 1.8 105-m low r ds(on) trenchfet 2.5 to 12 -v input 1.5 to 8 -v logic level control low profile, small footprint tsop-6 package 3000-v esd protection on input switch, v on/off adjustable slew-rate

the si3863dv includes a p- and n-channel mosfet in a single tsop-6 package. the low on-resistance p-channel trenchfet is tailored for use as a load switch. the n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. the n-channel mosfet has internal esd protection and can be driven by logic signals as low as 1.5-v. the si3863dv operates on supply lines from 2.5 to 12-v, and can drive loads up to 2.5 a.

0 5 10 15 20 25 02468 r2 (k ) switching variation r2 @ v in = 3 v, r1 = 20 k i l = 1 a v on/off = 3 v c i = 10 f c o = 1 f t r t d(on) t d(off) t f ( time s) note: for r2 switching variations with other v in /r1 combinations see typical characteristics v out gnd load v in on/off r2 r2 1 2, 3 c1 6 4 6 5 r1 q1 q2 si3863dv c o c i r1 pull-up resistor typical 10 k to 1 m * r2 optional slew-rate control typical 0 to 100 k * c1 optional slew-rate control typical 1000 pf *minimum r1 value should be at least 10 x r2 to ensure q1 turn-on. the si3863dv is ideally suited for high-side load switching in portable applications. the integrated n-channel level-shift device saves space by reducing external components. the slew rate is set externally so that rise-times can be tailored to different load types.
si3863dv vishay siliconix new product www.vishay.com faxback 408-970-5600 2-2 document number: 70866 s-60514erev. a, 5-apr-99
d2 tsop-6 top view 6 4 1 2 3 5 s2 on/off r1, c1 d2 d2 r2 s2 on/off r2 1 4 6 5 q1 q2 si3863dv r1, c1 2, 3
parameter symbol limit unit input voltage v in 12 v on/off voltage v on/off 8 v load current continuous a, b i l 2.5 a load current pulsed b, c i l 5 a continuous intrinsic diode conduction a i s 1 maximum power dissipation a p d 0.83 w operating junction and storage temperature range t j , t stg 55 to 150 c esd rating, mil-std-883d human body model (100 pf, 1500 ) esd 3 kv parameter symbol typical maximum unit maximum junction-to-ambient (continuous current) a r thja 120 150 c/w maximum junction-to-foot (q2) r thjc 35 50 c/w
parameter symbol test condition min typ max unit off characteristics reverse leakage current i fl v in = 12 v, v on/off = 0 v 1 a diode forward voltage v sd i s = 1 a 0.75 1 v on characteristics input voltage range v in 2.5 12 v o r i ( h l)@1a v15v v in = 4.5 v 0.086 0.105 on-resistance (p-channel) @ 1 a r ds(on) v on/off = 1.5 v i d = 1 a v in = 3.0 v 0.105 0.125 i d 1 a v in = 2.5 v 0.135 0.165 on - state (p - channel) drain - current i d(on) v in-out 0.2 v, v in = 5 v, v on/off = 1.5 v 1 a on - state (p - channel) drain - current i d(on) v in-out 0.3 v, v in = 3 v, v on/off = 1.5 v 1 a notes a. surface mounted on fr4 board. b. v in = 12 v, v on/off = 8 v, t a = 25 c. c. pulse test: pulse width 300 s, duty cycle 2%.
si3863dv vishay siliconix new product document number: 70866 s-60514erev. a, 5-apr-99 www.vishay.com faxback 408-970-5600 2-3
0.04 0.02 0.00 0.02 0.04 0.06 50 25 0 25 50 75 100 125 150 t j junction temperature ( c) 0 0.1 0.2 0.3 0.4 0.5 0.6 012345 0 0.08 0.16 0.24 0.32 0.40 02468 0 0.1 0.2 0.3 0.4 0.5 0.6 012345 v drop vs. i l @ v in = 4.5 v i l (a) (v) v drop on-resistance vs. input voltage v on/off = 1.5 to 8 v 0 0.08 0.16 0.24 0.32 0.40 02468 on-resistance ( r ss(on) ) t j = 125 c t j = 25 c v drop vs. i l @ v in = 3 v i l (a) (v) v drop v on/off = 1.5 to 8 v t j = 125 c t j = 25 c v drop vs. i l @ v in = 2.5 v i l (a) (v) v drop v on/off = 1.5 to 8 v t j = 125 c t j = 25 c v drop vs. v in @ i l = 1 a v in (v) (v) v drop i l = 1 a v on/off = 1.5 to 8 v t j = 125 c t j = 25 c v drop variance vs. junction temperature variance (v) v drop i l = 1 a v on/off = 1.5 to 8 v v in = 2.5 v v in = 4.5 v v in (v) i l = 1 a v on/off = 1.5 to 8 v t j = 125 c t j = 25 c
si3863dv vishay siliconix new product www.vishay.com faxback 408-970-5600 2-4 document number: 70866 s-60514erev. a, 5-apr-99
0 100 200 300 400 500 0 20406080 0.6 0.8 1.0 1.2 1.4 1.6 50 25 0 25 50 75 100 125 150 0 50 100 150 200 250 0 20406080 0 5 10 15 20 25 02468 normalized on-resistance vs. junction temperature 0 6 12 18 24 30 02468 r2 (k ) ( time t r (normalized) on-resistance ( r ds(on) ) t j junction temperature ( c) i l = 1 a v on/off = 1.5 to 8 v v in = 4.5 v v in = 2.5 v switching variation r2 @ v in = 4.5 v, r1 = 20 k i l = 1 a v on/off = 3 v c i = 10 f c o = 1 f t f t d(on) t d(off) r2 (k ) switching variation r2 @ v in = 3 v, r1 = 20 k i l = 1 a v on/off = 3 v c i = 10 f c o = 1 f t r t d(on) t d(off) t f s) ( time s) r2 (k ) switching variation r2 @ v in = 2.5 v, r1 = 20 k ( time s) i l = 1 a v on/off = 3 v c i = 10 f c o = 1 f t d(on) t r t f t d(off) r2 (k ) switching variation r2 @ v in = 4.5 v, r1 = 300 k i l = 1 a v on/off = 3 v c i = 10 f c o = 1 f ( time s) r2 (k ) switching variation r2 @ v in = 3 v, r1 = 300 k ( time s) i l = 1 a v on/off = 3 v c i = 10 f c o = 1 f t d(on) t r t d(off) t f t f t d(off) t r t d(on)
si3863dv vishay siliconix new product document number: 70866 s-60514erev. a, 5-apr-99 www.vishay.com faxback 408-970-5600 2-5
0 50 100 150 200 250 0 20406080 10 3 10 2 1 10 600 10 1 10 4 100 normalized thermal transient impedance, junction-to-ambient 2 1 0.1 0.01 normalized effective transient thermal impedance 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 150 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm square wave pulse dureation (sec) r2 (k ) switching variation r2 @ v in = 2.5 v, r1 = 300 k ( time s) i l = 1 a v on/off = 3 v c i = 10 f c o = 1 f t r t d(off) t f t d(on)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.

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